BD745 GP BJT

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  • 5151 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 45V 20A 3-Pin(3+Tab) SOT-93

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 50 V
Maximum Collector Emitter Saturation Voltage \1@0.5A@5A 3@5A@20A\
Maximum Collector Emitter Voltage 45 V
Maximum DC Collector Current 20 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 115000 mW
Type NPN