BD750B GP BJT

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  • 10 NEW JERSEY SEMICONDUCTOR

Trans GP BJT PNP 100V 20A

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Emitter Saturation Voltage 1.5@0.75A@7.5A V
Maximum Collector Emitter Voltage 100 V
Maximum DC Collector Current 20 A
Maximum Emitter Base Voltage 7 V
Maximum Operating Temperature 200 ᄀC
Maximum Power Dissipation 250000 mW
Maximum Transition Frequency 4(Min) MHz
Type PNP