BD779 Darlington BJT
Datasheet: View
Stock
- 5122 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Configuration | Single | |
| Maximum Base Emitter Saturation Voltage | 2.5@6mA@1.5A | V |
| Maximum Collector Base Voltage | 60 | V |
| Maximum Collector Emitter Voltage | 60 | V |
| Maximum Continuous DC Collector Current | 4 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Minimum DC Current Gain | 750@2000mA | |
| Minimum Operating Temperature | -65 | °C |
| Number of Elements per Chip | 1 | |
| Type | NPN | |
| Typical Current Gain Bandwidth | 20(Min) | MHz |