BD792 GP BJT

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  • 4107 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 100V 4A 3-Pin TO-225

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 100 V
Maximum Collector Emitter Saturation Voltage 0.5@50mA@500mA|1@100mA@1A|2.5@200mA@2A|3@800mA@4A V
Maximum Collector Emitter Voltage 100 V
Maximum DC Collector Current 4 A
Maximum Emitter Base Voltage 6 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 15000 mW
Maximum Transition Frequency 40(Min) MHz
Type NPN