BD801 GP BJT
Datasheet: View
Stock
- 4028 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Maximum Transition Frequency | 3(Min) | z |
| Type | NPN | |
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 100 | V |
| Maximum DC Collector Current | 8 | A |
| Maximum Power Dissipation | 65000 | W |
| Maximum Collector Emitter Voltage | 100 | V |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Collector Emitter Saturation Voltage | 1@0.3A@3A | V |
| Maximum Operating Temperature | 150 |