BD807 GP BJT

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  • 5157 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 60V 10A

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 70 V
Maximum Collector Emitter Saturation Voltage 1.1@0.4A@4A V
Maximum Collector Emitter Voltage 60 V
Maximum DC Collector Current 10 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 ᄀC
Maximum Power Dissipation 90000 mW
Maximum Transition Frequency 1.5(Min) MHz
Type NPN