BD809 GP BJT
Datasheet: View
Stock
- 13000 BANESA
- 4114 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 80 | V |
| Maximum Collector Emitter Saturation Voltage | 1.1@0.3A@3A | V |
| Maximum Collector Emitter Voltage | 80 | V |
| Maximum DC Collector Current | 10 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 90000 | mW |
| Maximum Transition Frequency | 1.5(Min) | MHz |
| Type | NPN |