BD809 GP BJT

default part image

Datasheet: View

Stock

  • 13000 BANESA
  • 4114 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 80V 10A 3-Pin(3+Tab) TO-220AB Rail

Request For Quote Datasheet
Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 80 V
Maximum Collector Emitter Saturation Voltage 1.1@0.3A@3A V
Maximum Collector Emitter Voltage 80 V
Maximum DC Collector Current 10 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 90000 mW
Maximum Transition Frequency 1.5(Min) MHz
Type NPN