BD910 GP BJT

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  • 6031 NEW JERSEY SEMICONDUCTOR

Trans GP BJT PNP 80V 15A 3-Pin(3+Tab) TO-220 Tube

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 80 V
Maximum Collector Emitter Saturation Voltage \1@0.5A@5A 3@2.5A@10A\
Maximum Collector Emitter Voltage 80 V
Maximum DC Collector Current 15 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 90000 mW
Maximum Transition Frequency 3(Min) MHz
Type PNP