BD933 GP BJT

default part image

Datasheet: View

Stock

  • 4013 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 45V 3A

Request For Quote Datasheet
Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 45 V
Maximum Collector Emitter Saturation Voltage 0.6@0.1A@1A V
Maximum Collector Emitter Voltage 45 V
Maximum DC Collector Current 3 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 ᄀC
Maximum Power Dissipation 30000 mW
Maximum Transition Frequency 3(Min) MHz
Type NPN