BDS11 GP BJT
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- 4859 NEW JERSEY SEMICONDUCTOR
Trans GP BJT NPN 80V 15A 3-Pin(3+Tab) TO-257AA
Request For Quote| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 80 | V |
| Maximum Collector Emitter Saturation Voltage | 1@0.5A@5A | 3@2.5A@10A |
| Maximum Collector Emitter Voltage | 80 | V |
| Maximum DC Collector Current | 15 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 43750 | mW |
| Maximum Transition Frequency | 3(Min) | MHz |
| Type | NPN |