BDS19 GP BJT

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  • 4251 NEW JERSEY SEMICONDUCTOR

Trans GP BJT PNP 150V 8A 3-Pin(3+Tab) TO-257AB

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 150 V
Maximum Collector Emitter Saturation Voltage 0.4@0.05A@0.5A 1.5@0.4A@4A
Maximum Collector Emitter Voltage 150 V
Maximum DC Collector Current 8 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 43750 mW
Maximum Transition Frequency 30(Min) MHz
Type PNP