BDS19 GP BJT
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- 4251 NEW JERSEY SEMICONDUCTOR
Trans GP BJT PNP 150V 8A 3-Pin(3+Tab) TO-257AB
Request For Quote| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 150 | V |
| Maximum Collector Emitter Saturation Voltage | 0.4@0.05A@0.5A | 1.5@0.4A@4A |
| Maximum Collector Emitter Voltage | 150 | V |
| Maximum DC Collector Current | 8 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 43750 | mW |
| Maximum Transition Frequency | 30(Min) | MHz |
| Type | PNP |