BDT30 GP BJT

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  • 3625 NEW JERSEY SEMICONDUCTOR

Trans GP BJT PNP 40V 1A

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 80 V
Maximum Collector Emitter Saturation Voltage 0.7@0.125A@1A V
Maximum Collector Emitter Voltage 40 V
Maximum DC Collector Current 1 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 ᄀC
Maximum Power Dissipation 30000 mW
Maximum Transition Frequency 3(Min) MHz
Type PNP