BDT30B GP BJT

default part image

Datasheet: View

Stock

  • 4412 NATIONAL SEMICONDUCTOR

Trans GP BJT PNP 80V 1A

Request For Quote Datasheet
Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 120 V
Maximum Collector Emitter Saturation Voltage 0.7@0.125A@1A V
Maximum Collector Emitter Voltage 80 V
Maximum DC Collector Current 1 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 ᄀC
Maximum Power Dissipation 30000 mW
Maximum Transition Frequency 3(Min) MHz
Type PNP