BDT31BF GP BJT

default part image

Datasheet: View

Stock

  • 3697 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 80V 3A

Request For Quote Datasheet
Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 120 V
Maximum Collector Emitter Saturation Voltage 1.2@0.375A@3A V
Maximum Collector Emitter Voltage 80 V
Maximum DC Collector Current 3 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 ᄀC
Maximum Power Dissipation 22000 mW
Maximum Transition Frequency 3(Min) MHz
Type NPN