BDT32 GP BJT

Features	Values	Unit
Category	Bipolar Power
Configuration	Single
Material	Si
Maximum Collector Base Voltage	80	V
Maximum Collector Emitter Saturation Voltage	1.2@0.375A@3A	V
Maximum Collector Emitter Voltage	40	V
Maximum DC Collector Current	3	A
Maximum Emitter Base Voltage	5	V
Maximum Operating Temperature	150	ﾡC
Maximum Power Dissipation	40000	mW
Maximum Transition Frequency	3(Min)	MHz
Type	PNP