BDT32DF GP BJT

Features	Values	Unit
Category	Bipolar Power
Configuration	Single
Material	Si
Maximum Collector Base Voltage	160	V
Maximum Collector Emitter Saturation Voltage	2.5@0.75A@3A	V
Maximum Collector Emitter Voltage	120	V
Maximum DC Collector Current	3	A
Maximum Emitter Base Voltage	5	V
Maximum Operating Temperature	150	ﾡC
Maximum Power Dissipation	22000	mW
Maximum Transition Frequency	3(Min)	MHz
Type	PNP