BDT62A Darlington BJT
Datasheet: View
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- 12 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Configuration | Single | |
| Maximum Collector Base Voltage | 80 | V |
| Maximum Collector Emitter Voltage | 80 | V |
| Maximum Continuous DC Collector Current | 10 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | ﾡC |
| Minimum DC Current Gain | 1000@3A@3V | |
| Minimum Operating Temperature | -65 | ﾡC |
| Number of Elements per Chip | 1 | |
| Type | PNP |