BDT65C Darlington BJT
Datasheet: View
Stock
- 6561 NEW JERSEY SEMICONDUCTOR
- 6 RF POWER
| Features | Values | Unit |
|---|---|---|
| Configuration | Single | |
| Maximum Collector Base Voltage | 120 | V |
| Maximum Collector Emitter Voltage | 120 | V |
| Maximum Continuous DC Collector Current | 12 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Minimum DC Current Gain | 1000@5A@4V | |
| Number of Elements per Chip | 1 | |
| Type | NPN |