BDT91 GP BJT
Datasheet: View
Stock
- 2639 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 100 | V |
| Maximum Collector Emitter Saturation Voltage | 1@0.5A@5A|1.6@0.7A@7A | V |
| Maximum Collector Emitter Voltage | 100 | V |
| Maximum DC Collector Current | 15 | A |
| Maximum Emitter Base Voltage | 7 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 125000 | mW |
| Maximum Transition Frequency | 10(Typ) | MHz |
| Type | NPN |