BDT95 GP BJT

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  • 3833 NEW JERSEY SEMICONDUCTOR
  • 5 WORLD WIDE

Trans GP BJT NPN 100V 10A

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 100 V
Maximum Collector Emitter Saturation Voltage 1@0.4A@4A 3@3.3A@10A
Maximum Collector Emitter Voltage 100 V
Maximum DC Collector Current 10 A
Maximum Emitter Base Voltage 7 V
Maximum Operating Temperature 150 ᄀC
Maximum Power Dissipation 90000 mW
Maximum Transition Frequency 4(Min) MHz
Type NPN