BDW36 GP BJT

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  • 4102 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 180V 30A

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 180 V
Maximum Collector Emitter Saturation Voltage 1@1A@10A 3@6A@30A
Maximum Collector Emitter Voltage 180 V
Maximum DC Collector Current 30 A
Maximum Emitter Base Voltage 7 V
Maximum Operating Temperature 200 ᄀC
Maximum Power Dissipation 250000 mW
Maximum Transition Frequency 1(Min) MHz
Type NPN