BDW51B GP BJT
Datasheet: View
Stock
- 1 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Maximum Collector Base Voltage | 80 | V |
| Maximum Collector Emitter Saturation Voltage | 3@10A | V |
| Maximum Collector Emitter Voltage | 80 | V |
| Maximum DC Collector Current | 15 | A |
| Maximum Power Dissipation | 125000 | mW |
| Maximum Transition Frequency | 3(Min) | MHz |
| Type | NPN |