BDW51C GP BJT

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  • 19 NATIONAL SEMICONDUCTOR

Trans GP BJT NPN 100V 15A 3-Pin(2+Tab) TO-3 Sleeve

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Base Voltage 100 V
Maximum Collector Emitter Saturation Voltage 3@10A V
Maximum Collector Emitter Voltage 100 V
Maximum DC Collector Current 15 A
Maximum Power Dissipation 125000 mW
Maximum Transition Frequency 3(Min) MHz
Type NPN