BDW93C Darlington BJT
Datasheet: View
Stock
- 103 NEW JERSEY SEMICONDUCTOR
- 6 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Configuration | Single | |
| Maximum Base Emitter Saturation Voltage | \2.5@20mA@5A | 4@100mA@10A\ |
| Maximum Collector Base Voltage | 100 | V |
| Maximum Collector Emitter Voltage | 100 | V |
| Maximum Continuous DC Collector Current | 12 | A |
| Maximum Operating Temperature | 150 | °C |
| Minimum DC Current Gain | \1000@3A@3V | 750@5A@3V |
| Minimum Operating Temperature | -65 | °C |
| Number of Elements per Chip | 1 | |
| Type | NPN |