BDX35 GP BJT
Datasheet: View
Stock
- 110 NEW JERSEY SEMICONDUCTOR
- 760 PHILIPS
- 40 RF POWER
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Maximum Collector Base Voltage | 100 | V |
| Maximum Collector Emitter Saturation Voltage | 0.9@0.5A@5A|1.2@0.7A@7A | V |
| Maximum Collector Emitter Voltage | 60 | V |
| Maximum DC Collector Current | 5 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 1250 | mW |
| Maximum Transition Frequency | 100(Typ) | MHz |
| Type | NPN |