BDY25B GP BJT
Datasheet: View
Stock
- 744 NEW JERSEY SEMICONDUCTOR
- 6 SGS
- 55 TOMSON
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Maximum Collector Base Voltage | 200 | V |
| Maximum Collector Emitter Saturation Voltage | 0.6@0.25A@2A | V |
| Maximum Collector Emitter Voltage | 140 | V |
| Maximum DC Collector Current | 6 | A |
| Maximum Emitter Base Voltage | 10 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 50000 | mW |
| Maximum Transition Frequency | 10(Min) | MHz |
| Type | NPN |