BDY80B GP BJT

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  • 2 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 35V 4A

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 40 V
Maximum Collector Emitter Saturation Voltage 1@0.05A@1A V
Maximum Collector Emitter Voltage 35 V
Maximum DC Collector Current 4 A
Maximum Emitter Base Voltage 10 V
Maximum Operating Temperature 150 ᄀC
Maximum Power Dissipation 36000 mW
Maximum Transition Frequency 1(Typ) MHz
Type NPN