BDY90 GP BJT

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  • 89 HARRIS
  • 7473 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 100V 10A 3-Pin(2+Tab) TO-3

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 120 V
Maximum Collector Emitter Saturation Voltage 0.5@0.5A@5A|1.5@1A@10A V
Maximum Collector Emitter Voltage 100 V
Maximum DC Collector Current 10 A
Maximum Emitter Base Voltage 6 V
Maximum Operating Temperature 175 °C
Maximum Power Dissipation 60000 mW
Maximum Transition Frequency 70(Typ) MHz
Type NPN