BDY96D GP BJT
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- 211 NEW JERSEY SEMICONDUCTOR
Trans GP BJT NPN 350V 10A
Request For Quote| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 750 | V |
| Maximum Collector Emitter Saturation Voltage | 1.5@0.5A@2.5A | 3@1.25A@4A |
| Maximum Collector Emitter Voltage | 350 | V |
| Maximum DC Collector Current | 10 | A |
| Maximum Emitter Base Voltage | 7 | V |
| Maximum Operating Temperature | 150 | ﾡC |
| Maximum Power Dissipation | 40000 | mW |
| Maximum Transition Frequency | 10(Typ) | MHz |
| Type | NPN |