BF173 GP BJT

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  • 287 NEW JERSEY SEMICONDUCTOR
  • 76 SGS

Trans GP BJT 25V 30A

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Features Values Unit
Configuration Single
Maximum Collector Base Voltage 40 V
Maximum Collector Emitter Voltage 25 V
Maximum DC Collector Current 30 A
Maximum Emitter Base Voltage 4 V
Maximum Power Dissipation 200 mW
Maximum Transition Frequency 550 MHz