BF179A GP BJT
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- 18 NEW JERSEY SEMICONDUCTOR
Trans GP BJT NPN 160V 0.05A
Request For Quote| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Emitter Saturation Voltage | 20(Typ)@20mA | V |
| Maximum Collector Emitter Voltage | 160 | V |
| Maximum DC Collector Current | 0.05 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 200 | ﾡC |
| Maximum Power Dissipation | 600 | mW |
| Maximum Transition Frequency | 150(Typ) | MHz |
| Type | NPN |