BF179C GP BJT

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  • 10 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 250V 0.05A

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Emitter Saturation Voltage 20(Typ)@20mA V
Maximum Collector Emitter Voltage 250 V
Maximum DC Collector Current 0.05 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 200 ᄀC
Maximum Power Dissipation 600 mW
Maximum Transition Frequency 150(Typ) MHz
Type NPN