BF241 RF BJT
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- 5023 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Configuration | Single | |
| Maximum Base Emitter Saturation Voltage | 0.74@0.1mA@1mA | V |
| Maximum Collector Base Voltage | 40 | V |
| Maximum Collector Emitter Saturation Voltage | 0.65@0.1mA@1mA | V |
| Maximum Collector Emitter Voltage | 40 | V |
| Maximum DC Collector Current | 0.05 | A |
| Maximum Emitter Base Voltage | 4 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Transition Frequency | 1100 | MHz |
| Minimum DC Current Gain | 65@1mA@10V | |
| Minimum Operating Temperature | -55 | °C |
| Number of Elements per Chip | 1 | |
| Type | NPN |