BF257 GP BJT

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  • 44224 NEW JERSEY SEMICONDUCTOR
  • 115 TEXAS INSTRUMENT

Trans GP BJT NPN 160V 0.1A 3-Pin TO-39

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 160 V
Maximum Collector Emitter Saturation Voltage 1@6mA@30mA V
Maximum Collector Emitter Voltage 160 V
Maximum DC Collector Current 0.1 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 5000 mW
Maximum Transition Frequency 90(Typ) MHz
Type NPN