BF416 GP BJT

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  • 100 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 250V 0.1A 3-Pin TO-126

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Features Values Unit
Category Bipolar Small Signal
Configuration Single
Maximum Collector Base Voltage 300 V
Maximum Collector Emitter Saturation Voltage 6@20mA@200mA V
Maximum Collector Emitter Voltage 250 V
Maximum DC Collector Current 0.1 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 800 mW
Maximum Transition Frequency 90(Min) MHz
Type NPN