BF457 GP BJT
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- 2396 NATIONAL SEMICONDUCTOR
- 1995 NEW JERSEY SEMICONDUCTOR
- 16300 PHILIPS
- 404 SGS
- 3 SIEMENS
Trans GP BJT NPN 160V 0.3A 3-Pin TO-126
Request For Quote| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Maximum Collector Base Voltage | 160 | V |
| Maximum Collector Emitter Saturation Voltage | 1@10mA@50mA | V |
| Maximum Collector Emitter Voltage | 160 | V |
| Maximum DC Collector Current | 0.3 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 1250 | mW |
| Maximum Transition Frequency | 90(Typ) | MHz |
| Type | NPN |