BF458 GP BJT
Datasheet: View
Stock
- 15800 BANESA
- 5823 NATIONAL SEMICONDUCTOR
- 245 NEW JERSEY SEMICONDUCTOR
- 52 ST MICRO
- 5 TEXAS INSTRUMENT
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Maximum Collector Base Voltage | 250 | V |
| Maximum Collector Emitter Saturation Voltage | 1@10mA@50mA | V |
| Maximum Collector Emitter Voltage | 250 | V |
| Maximum DC Collector Current | 0.3 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 1250 | mW |
| Maximum Transition Frequency | 90(Typ) | MHz |
| Type | NPN |