BF506 RF BJT

Features	Values	Unit
Configuration	Single
Material	Si
Maximum Collector Base Voltage	40	V
Maximum Collector Emitter Voltage	35	V
Maximum DC Collector Current	30	A
Maximum Emitter Base Voltage	4	V
Maximum Operating Temperature	150	°C
Maximum Transition Frequency	550(Typ)	MHz
Minimum DC Current Gain	25@3mA@10V
Minimum Operating Temperature	-55	°C
Number of Elements per Chip	1
Type	NPN