BF583 GP BJT

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  • 210 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 250V 0.05A 3-Pin(3+Tab) TO-202

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Features Values Unit
Category Bipolar Power
Configuration Single
Maximum Collector Base Voltage 300 V
Maximum Collector Emitter Saturation Voltage 0.6@5mA@30mA V
Maximum Collector Emitter Voltage 250 V
Maximum DC Collector Current 0.05(Min) A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 150 °C
Maximum Power Dissipation 1600 mW
Maximum Transition Frequency 110 MHz
Type NPN