BF583 GP BJT
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- 210 NEW JERSEY SEMICONDUCTOR
Trans GP BJT NPN 250V 0.05A 3-Pin(3+Tab) TO-202
Request For Quote| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Maximum Collector Base Voltage | 300 | V |
| Maximum Collector Emitter Saturation Voltage | 0.6@5mA@30mA | V |
| Maximum Collector Emitter Voltage | 250 | V |
| Maximum DC Collector Current | 0.05(Min) | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 1600 | mW |
| Maximum Transition Frequency | 110 | MHz |
| Type | NPN |