BFG193 RF BJT
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- 8623 NEW JERSEY SEMICONDUCTOR
- 10890 SIEMENS
| Features | Values | Unit |
|---|---|---|
| Configuration | Single Dual Emitter | |
| Material | Si | |
| Maximum Collector Base Voltage | 20 | V |
| Maximum Collector Emitter Voltage | 12 | V |
| Maximum DC Collector Current | 0.08 | A |
| Maximum Emitter Base Voltage | 2 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Transition Frequency | 8000(Typ) | MHz |
| Minimum DC Current Gain | 70@30mA@8V | |
| Minimum Operating Temperature | -55 | °C |
| Number of Elements per Chip | 1 | |
| Type | NPN |