BFR35AP RF BJT
Datasheet: View
Stock
- 6900 NEW JERSEY SEMICONDUCTOR
- 3000 SIEMENS
| Features | Values | Unit |
|---|---|---|
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 20 | V |
| Maximum Collector Emitter Voltage | 15 | V |
| Maximum DC Collector Current | 0.045 | A |
| Maximum Emitter Base Voltage | 2.5 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Transition Frequency | 5000(Typ) | MHz |
| Minimum DC Current Gain | 70@15mA@8V | |
| Minimum Operating Temperature | -55 | °C |
| Number of Elements per Chip | 1 | |
| Type | NPN |