BFX41 GP BJT

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  • 985 NEW JERSEY SEMICONDUCTOR
  • 2 RF POWER
  • 1 ST MICRO

Trans GP BJT PNP 75V 1A 3-Pin TO-39

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Features Values Unit
Category Bipolar Power
Configuration Single
Material Si
Maximum Collector Base Voltage 75 V
Maximum Collector Emitter Saturation Voltage 0.15@15mA@150mA|0.5@50mA@500mA V
Maximum Collector Emitter Voltage 75 V
Maximum DC Collector Current 1 A
Maximum Emitter Base Voltage 5 V
Maximum Operating Temperature 200 °C
Maximum Power Dissipation 800 mW
Maximum Transition Frequency 150(Typ) MHz
Type PNP