BFX41 GP BJT
Datasheet: View
Stock
- 985 NEW JERSEY SEMICONDUCTOR
- 2 RF POWER
- 1 ST MICRO
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Power | |
| Configuration | Single | |
| Material | Si | |
| Maximum Collector Base Voltage | 75 | V |
| Maximum Collector Emitter Saturation Voltage | 0.15@15mA@150mA|0.5@50mA@500mA | V |
| Maximum Collector Emitter Voltage | 75 | V |
| Maximum DC Collector Current | 1 | A |
| Maximum Emitter Base Voltage | 5 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 800 | mW |
| Maximum Transition Frequency | 150(Typ) | MHz |
| Type | PNP |