BFX85 GP BJT
Datasheet: View
Stock
- 3 NATIONAL SEMICONDUCTOR
- 595 NEW JERSEY SEMICONDUCTOR
- 4 RF POWER
- 5 WORLD WIDE
| Features | Values | Unit |
|---|---|---|
| Category | Bipolar Small Signal | |
| Configuration | Single | |
| Maximum Collector Base Voltage | 100 | V |
| Maximum Collector Emitter Saturation Voltage | 0.2@1mA@10mA|0.35@15mA@150mA|1@50mA@500mA|1.6@100mA@1A | V |
| Maximum Collector Emitter Voltage | 60 | V |
| Maximum DC Collector Current | 1 | A |
| Maximum Emitter Base Voltage | 6 | V |
| Maximum Operating Temperature | 150 | °C |
| Maximum Power Dissipation | 800 | mW |
| Maximum Transition Frequency | 185(Typ) | MHz |
| Type | NPN |