BFX90 GP BJT

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  • 68 NEW JERSEY SEMICONDUCTOR
  • 5 SGS

Trans GP BJT NPN 150V 0.1A 3-Pin TO-39

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Features Values Unit
Configuration Single
Material Si
Maximum Collector Base Voltage 150 V
Maximum Collector Emitter Saturation Voltage 1@2.5mA@25mA V
Maximum Collector Emitter Voltage 150 V
Maximum DC Collector Current 0.1 A
Maximum Emitter Base Voltage 6 V
Maximum Operating Temperature 200 °C
Type NPN