BLF175 RF MOSFET
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- 0 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Channel Mode | Enhancement | |
| Channel Type | N | |
| Configuration | Single Dual Source | |
| Material | Si | |
| Maximum Continuous Drain Current | 4 | A |
| Maximum Drain Source Resistance | 1500@10V | mOhm |
| Maximum Drain Source Voltage | 125 | V |
| Maximum Frequency | 108 | MHz |
| Maximum Operating Temperature | 200 | °C |
| Maximum Power Dissipation | 68000 | mW |
| Minimum Operating Temperature | -65 | °C |
| Number of Elements per Chip | 1 |