BLU97 RF BJT
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- 10 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Configuration | Single Dual Emitter | |
| Material | Si | |
| Maximum Collector Base Voltage | 36 | V |
| Maximum Collector Emitter Voltage | 16 | V |
| Maximum DC Collector Current | 1.2 | A |
| Maximum Emitter Base Voltage | 3 | V |
| Maximum Operating Temperature | 200 | °C |
| Minimum DC Current Gain | 25@0.9A@10V | |
| Number of Elements per Chip | 1 | |
| Output Power | 7 | W |
| Type | NPN |