Datasheet: View
Features | Values | Unit |
---|---|---|
Configuration | Single Dual Emitter | |
Material | Si | |
Maximum Collector Base Voltage | 36 | V |
Maximum Collector Emitter Voltage | 16 | V |
Maximum DC Collector Current | 0.8 | A |
Maximum Emitter Base Voltage | 3 | V |
Maximum Operating Temperature | 200 | °C |
Maximum Transition Frequency | 4000(Typ) | MHz |
Minimum DC Current Gain | 25@0.6A@10V | |
Number of Elements per Chip | 1 | |
Output Power | 5 | W |
Type | NPN |