BLV36 RF BJT

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  • 201 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 33V 12.5A 4-Pin SOT-147

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Features Values Unit
Configuration Single Dual Emitter
Material Si
Maximum Base Emitter Saturation Voltage 0.75(Typ)@0.6A@6A V
Maximum Collector Emitter Saturation Voltage 15@3A@25A V
Maximum Collector Emitter Voltage 33 V
Maximum DC Collector Current 12.5 A
Maximum Emitter Base Voltage 4 V
Maximum Operating Temperature 200 °C
Maximum Transition Frequency 750(Typ) MHz
Minimum DC Current Gain 100(Max)
Minimum Operating Temperature -65 °C
Number of Elements per Chip 1
Output Power 26.5(Typ) W
Type NPN