BLV36 RF BJT
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- 201 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Configuration | Single Dual Emitter | |
| Material | Si | |
| Maximum Base Emitter Saturation Voltage | 0.75(Typ)@0.6A@6A | V |
| Maximum Collector Emitter Saturation Voltage | 15@3A@25A | V |
| Maximum Collector Emitter Voltage | 33 | V |
| Maximum DC Collector Current | 12.5 | A |
| Maximum Emitter Base Voltage | 4 | V |
| Maximum Operating Temperature | 200 | °C |
| Maximum Transition Frequency | 750(Typ) | MHz |
| Minimum DC Current Gain | 100(Max) | |
| Minimum Operating Temperature | -65 | °C |
| Number of Elements per Chip | 1 | |
| Output Power | 26.5(Typ) | W |
| Type | NPN |