BLV59 RF BJT
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- 200 NEW JERSEY SEMICONDUCTOR
| Features | Values | Unit |
|---|---|---|
| Configuration | Single Quad Emitter | |
| Material | Si | |
| Maximum Collector Base Voltage | 50 | V |
| Maximum Collector Emitter Voltage | 27 | V |
| Maximum DC Collector Current | 3 | A |
| Maximum Emitter Base Voltage | 3.5 | V |
| Maximum Operating Temperature | 200 | °C |
| Minimum DC Current Gain | 15@2A@24V | |
| Minimum Operating Temperature | -65 | °C |
| Number of Elements per Chip | 1 | |
| Output Power | 30 | W |
| Type | NPN |