BLW60C RF BJT

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  • 185 NEW JERSEY SEMICONDUCTOR

Trans GP BJT NPN 16V 9A 4-Pin CRPM

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Features Values Unit
Configuration Single Dual Emitter
Material Si
Maximum Collector Emitter Saturation Voltage 1.5(Typ)@2.5A@12.5A V
Maximum Collector Emitter Voltage 16 V
Maximum DC Collector Current 9 A
Maximum Emitter Base Voltage 4 V
Maximum Operating Temperature 200 °C
Maximum Transition Frequency 650(Typ) MHz
Minimum DC Current Gain 10@4A@5V
Number of Elements per Chip 1
Output Power 45 W
Type NPN